Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• for quantum communication and cryptography. Keywords: active charge state control; diamond; fast charge state switching; NV centre; two-dimensional Schottky diode; Introduction The nitrogen-vacancy centre (NV centre) in diamond is known to exist in at least three different charge states (NV−, NV0

• terminations and adsorbates. Hence, its charge state switches in an uncontrolled way between NV−, NV0 and presumably NV+ [8][9][10]. In addition, for realizing quantum computing applications such as quantum information processing with the electron spin of the NV− centre and quantum information storage with the

• an NV− centre can be used for initialising, manipulating and processing of quantum information as well as entanglement of its spin state with other NVs as quantum bits. The nuclear spin of a 13C atom can be used for storage of quantum information with a long lifetime. In order to achieve a long

Carbon-based smart nanomaterials in biomedicine and neuroengineering

• Antonina M. Monaco and
• Michele Giugliano

Beilstein J. Nanotechnol. 2014, 5, 1849–1863, doi:10.3762/bjnano.5.196

• fluorescence over a broad emission band in the visible region [17] of the spectrum. One of the most common and studied defects in diamond lattice is the nitrogen-vacancy centre (NV centre) [18], formed by a lattice vacancy and an adjacent nitrogen atom in the NDs. The importance of these NV centres lies in